Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐to the Micrometer Scale
Investigations of the use of patterned porous GaN underlayers to achieve elastic relaxation
of lattice‐mismatched top layers such as InGaN and AlGaN are reviewed. Thereby, the …
of lattice‐mismatched top layers such as InGaN and AlGaN are reviewed. Thereby, the …
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
S Besendörfer, E Meissner, F Medjdoub, J Derluyn… - Scientific reports, 2020 - nature.com
GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …
[HTML][HTML] Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN
Crack-free 1.3 μm thick elastically relaxed Al x Ga 1− x N layers were demonstrated on
compliant high fill-factor 10× 10 μm 2 tile patterned GaN-on-porous-GaN pseudo-substrates …
compliant high fill-factor 10× 10 μm 2 tile patterned GaN-on-porous-GaN pseudo-substrates …
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac… - Optical Materials …, 2015 - opg.optica.org
We report on the growth of Al_0. 57Ga_0. 43N/Al_0. 38Ga_0. 63N MQWs grown on a
relaxed Al_0. 58Ga_0. 42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy …
relaxed Al_0. 58Ga_0. 42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy …
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
Two AlGaN samples with different strain were designed to investigate mechanism of stress-
driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN …
driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN …
Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors
We report on the composition pulling effect and strain relief mechanism in AlGaN/AlN
distributed Bragg reflectors (DBRs) grown on GaN template/α-Al 2 O 3 (0001) by metal …
distributed Bragg reflectors (DBRs) grown on GaN template/α-Al 2 O 3 (0001) by metal …
The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
Herein, the effect of crystal quality of AlN buffer layer on AlGaN/GaN/AlN double‐
heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material …
heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material …
Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
JS Xue, JC Zhang, YW Hou, H Zhou, JF Zhang… - Applied Physics …, 2012 - pubs.aip.org
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures
were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD) …
were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD) …
Fully relaxed, crack-free AlGaN with upto 50% Al composition grown on porous GaN pseudo-substrate
Fully relaxed, crack free, smooth AlxGa1− xN layers with up to 50% Al composition were
demonstrated on pseudo-substrates composed of dense arrays of 10× 10 µm2 compliant …
demonstrated on pseudo-substrates composed of dense arrays of 10× 10 µm2 compliant …
The plasmonic resonant absorption in GaN double-channel high electron mobility transistors
We have investigated the plasmonic oscillations in GaN double-channel (DC) high electron
mobility transistors (HEMTs). It is shown that the absorption peaks of DC-HEMT can exist in …
mobility transistors (HEMTs). It is shown that the absorption peaks of DC-HEMT can exist in …