This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

With scaling, existing charge-based memory technologies exhibit limitations due to charge
leaking away easily in a smaller device. Therefore, non-charge based memory technologies …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

In this study, we focused on the uniformity of resistance states of Ti/TaO x/ITO devices and
the possibility of using them in neuromorphic applications under DC and pulse …

Resistive random access memory (RRAM) is an important candidate for both digital, high-
density data storage and for analog, neuromorphic computing. RRAM operation relies on …

In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

This paper proposes a new test approach that goes beyond cell-aware test, ie, device-aware
test. The approach consists of three steps: defect modeling, fault modeling, and test/DfT …

Resistive RAM (RRAM) is a promising technology to replace traditional technologies such
as Flash, because of its low energy consumption, CMOS compatibility, and high density …

Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays
is currently a challenging task due to several threats like the post-algorithm instability …

Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive
in achieving high-density and low-cost memory and will be required in future. In this chapter …