Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …

Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …

In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …

In vertically stacked gate-all-around Nanosheet FET (NSFET), the channels/sheets are
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …

Interface traps play a significant role in shaping the performance and reliability of
semiconductor devices, particularly in advanced technologies such as Negative …

The GAA FET has emerged as a promising device due to its excellent control over short-
channel effects and improved electrostatic control. This manuscript presents the analytical …

In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …

Internal and external process variations severely affect the device threshold voltage (V_th)
and, in turn, the device's reliability. For the first time, this paper presented a thorough …

This paper investigates the significance of interface trap charges (ITCs) distribution by
introducing localized charges (donor/acceptor) at the interface of semiconductor/insulator on …

Nanosheet field-effect transistors (NSFETs) have attracted considerable attention for their
potential to achieve improved performance and energy efficiency compared to traditional …