Deposition of n-type Bi2Te3 thin films on polyimide by using RF magnetron co-sputtering method

SJ Joo, BS Kim, BK Min, MW Oh, JE Lee… - … of Nanoscience and …, 2015 - ingentaconnect.com
Bi2Te3 thermoelectric thin films were deposited on the flexible polyimide substrates by RF
magnetron co-sputtering of a Bi and a Te targets. The influence of the substrate temperature …

High performance co-sputtered Bi2Te3 thin films with preferred orientation induced by MgO substrates

H Shang, F Ding, G Li, L Wang, F Qu, H Zhang… - Journal of Alloys and …, 2017 - Elsevier
Bi 2 Te 3 thin films were fabricated on the (00l)-oriented MgO substrates by the magnetron
co-sputtering method. The films microstructure of highly preferred orientation along the c …

[PDF][PDF] Tellurium based thermoelectric materials: new directions and prospects

YC Sharma, A Purohit - Journal of Integrated Science and …, 2016 - pubs.iscience.in
Telluride alloys are widely used in thermoelectric devices which generate electricity from
waste heat or act as Peltier coolers. Limited by toxicity these are best materials for room …

Nanocluster metal films as thermoelectric material for radioisotope mini battery unit

PV Borisyuk, AV Krasavin, EV Tkalya, YY Lebedinskii… - Chemical Physics, 2016 - Elsevier
The paper is devoted to studying the thermoelectric and structural properties of films based
on metal nanoclusters (Au, Pd, Pt). The experimental results of the study of single …

Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi–Te and Sb–Te thermoelectric films

H Yong, S Na, JG Gang, HS Shin… - Japanese Journal of …, 2016 - iopscience.iop.org
In this study, we explore various electrode materials (Au, Ti, and Sb) for use as contact
materials on Bi 2 Te 3 and Sb 2 Te 3 thermoelectric films. Using the transmission line …

Stable interconnect system for horizontal thermoelectric coolers by thermodynamic-based prediction

MW Jeong, SY Lee, HB Park, HJ Lee… - Electronic Materials Letters, 2019 - Springer
We studied the improvement of interfacial stability and contact resistance by applying Cu
with high electrical conductivity but high diffusivity to thin film type thermoelectric devices …

Material Modification and Selection to Prevent Atomic Migration and Reaction for Next Generation Device Development

정민우 - 2019 - s-space.snu.ac.kr
Due to the increase in demand for mobile devices and the improvement in performance,
many semiconductor devices are being developed in a limited space. Memory devices and …