Design and comparative analysis of FD-SOI FinFET with dual-dielectric spacers for high speed switching applications
Moore's law claims that recent technological developments have already resulted in a
significant rise in the number of transistors on a chip. By switching from a conventional …
significant rise in the number of transistors on a chip. By switching from a conventional …
Temperature analysis of DMGC CGAA FET for future deep space and military applications: an insight into Analog/RF/Self-Heating/Linearity
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
This manuscript introduces a pioneering investigation on the temperature effects of Dual
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
A Proposal for Optimization of Spacer Engineering at Sub-5-nm Technology Node for JL-TreeFET: A Device to Circuit Level Implementation
R Andavarapu, S Bagati, S Valasa… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This article for the first time explores the effect of different spacer materials on junctionless
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
Pushing the Boundaries: Design and Simulation Approach of Negative Capacitance Nanosheet FETs with Ferroelectric and Dielectric Spacers at the Sub-3 nm …
This manuscript for the first time introduces an approach of incorporating ferroelectric (FE)
spacers in the negative capacitance (NC) nanosheet (NS) field-effect transistor (FET) …
spacers in the negative capacitance (NC) nanosheet (NS) field-effect transistor (FET) …
Leakage and Thermal Reliability Optimization of Stacked Nanosheet Field-Effect Transistors with SiC Layers
C Li, Y Shao, F Kuang, F Liu, Y Wang, X Li, Y Zhuang - Micromachines, 2024 - mdpi.com
In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the
gate, with SiC layers under the source and drain, to improve the leakage current and thermal …
gate, with SiC layers under the source and drain, to improve the leakage current and thermal …
Dielectric Material and Thermal Optimization in Sidewall Spacer Design for Junctionless Nanosheet FETs at Sub-5 nm Technology Node: An Insight into Device and …
V Indhur, UM Dupati, M Lakkarasu… - ECS Journal of Solid …, 2024 - iopscience.iop.org
This study focuses on the design and analysis of Junctionless (JL) NSFETs, with an
emphasis on the influence of spacer materials and temperature variations. A different …
emphasis on the influence of spacer materials and temperature variations. A different …
Optimization of Sidewall Spacer Engineering at Sub-5 nm Technology Node For JL-Nanowire FET: Digital/Analog/RF/Circuit Perspective
C Anguru, VK Aryasomayajula, VR Kotha… - ECS Journal of Solid …, 2024 - iopscience.iop.org
This manuscript presents a performance analysis of 3-stack JL-NWFETs with different
spacer materials and spacer lengths. The DC and analog/RF performance is analysed at the …
spacer materials and spacer lengths. The DC and analog/RF performance is analysed at the …
Improvement of Thermal Characteristics and On-current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering
For improving thermal characteristics and on-current () in vertically stacked nanosheet field-
effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …
effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …
Multiwafer Process: Wafer Selection and Wafer Cleaning
LR Thoutam, YS Song - … of Emerging Materials for Semiconductor Industry, 2024 - Springer
In semiconductor manufacturing, one of the most important processes is wafer fabrication
and wafer cleaning. Even if a wafer appears free of scratches to the naked eye, there are …
and wafer cleaning. Even if a wafer appears free of scratches to the naked eye, there are …
Metal Deposition
S Kossar, AR Zargar, PAG Sankar, KS Rao… - Handbook of Emerging …, 2024 - Springer
Metal processing is such an important field that it is referred to as the completion of
semiconductors. Metal processing is necessary to apply voltage to transistors. In addition …
semiconductors. Metal processing is necessary to apply voltage to transistors. In addition …