Photodiode and photocapacitor properties of Au/CdTe/p-Si/Al device
The electrical and photoconductivity properties of CdTe on p-type silicon photodiode were
investigated by current–voltage (I–V) and capacitance time (C–t) measurements. The current …
investigated by current–voltage (I–V) and capacitance time (C–t) measurements. The current …
GZO/Si photodiodes exhibiting high photocurrent-to-dark-current ratio
ZnO: Ga (GZO)/Si photodiodes having different thicknesses of GZO layer are fabricated by
the sol-gel spin-coating method. The photoelectric properties of the devices are investigated …
the sol-gel spin-coating method. The photoelectric properties of the devices are investigated …
Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method
In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon
(Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed …
(Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed …
Fabrication and characterization of solution processed Al/Sn: ZnO/p-Si photodiodes
This study describes the deposition of ZnO thin films with various Sn doping concentration
by a solution-based spin coating method. The effect of Sn doping on structural ZnO thin films …
by a solution-based spin coating method. The effect of Sn doping on structural ZnO thin films …
Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical
properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are …
properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are …
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10− 9 A and a high rectification ratio …
Zn-doped GaN films have been deposited on Si (1 0 0), SiO 2/Si (1 0 0), and glass
substrates by RF reactive sputtering at 100–400° C with single cermet targets. The Zn-GaN …
substrates by RF reactive sputtering at 100–400° C with single cermet targets. The Zn-GaN …
The potential barrier-dependent carrier transport mechanism in n-SnO2/p-Si heterojunctions
K Ozel, A Yildiz - Sensors and Actuators A: Physical, 2021 - Elsevier
The metal oxide semiconductor-based pn heterojunctions have captured intense attention in
electronic and optoelectronic industry thanks to their simple and low-cost production and …
electronic and optoelectronic industry thanks to their simple and low-cost production and …
Structural, Optical, Electrical, and Photoresponse Properties of Postannealed Sn‐Doped ZnO Nanorods
Tin (Sn) doped ZnO nanorods were synthesized on glass substrate using a sol‐gel method.
The synthesized nanorods were postannealed at 150, 350, and 500° C. The surface …
The synthesized nanorods were postannealed at 150, 350, and 500° C. The surface …
Annealing ambient effect on electrical properties of ZnO: Al/p-Si heterojunctions
O Urper, O Karacasu, H Cimenoglu… - Superlattices and …, 2019 - Elsevier
Aluminum doped zinc oxide (ZnO: Al) thin films via 1.2 at.% Al content was deposited on p-
type silicon wafers by using sol-gel dip coating technique to compare the effect of post …
type silicon wafers by using sol-gel dip coating technique to compare the effect of post …
[HTML][HTML] Low power consumption UV sensor based on n-ZnO/p-Si junctions
We report on the manufacture of low power consumption UV sensor based on n-ZnO/p-Si
Junction. The ZnO thin film was prepared through RF sputtering process. The X-ray …
Junction. The ZnO thin film was prepared through RF sputtering process. The X-ray …