The studied influence ultrasonic irradiation on change the rolling charge built-in in structure
lead borosilicate glasses PbO-[SiO. sub. 2]-[B. sub. 2][O. sub. 3]-[Al. sub. 2][O. sub. 3]-[Ta …

In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …

Charge transport in semiconductor devices is highly sensitive to light, which opens up wide
application prospects. The lateral photovoltaic effect (LPE) is widely used in position …

Abstract In this work, Metal Insulator Semiconductor (MIS) device is fabricated by depositing
Graphene Oxide (GO) layer between the top and bottom Polyvinyl Alcohol (PVA) layers to …

Thin-film techniques are important in the miniaturization of electronic devices. We studied a
thin-film magnetoimpedance element made with Co-based amorphous soft magnetic …

The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky
diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the …

This paper presents the results of the study the transport properties of the SOI-based
structure. Measurements were carried out on an alternating current with an external …

The magnetization dynamics in ZnO: Ag/NiFe heterostructures has been investigated
through magnetoimpedance measurements. By annealing the ZnO: Ag layer during the …

A silicon structure doped with Ga using ion implantation has been investigated by
admittance spectroscopy. It has been established that the presence of the Ga impurity, along …

Структуры металл диэлектрик полупроводник (МДП) являются важным компонентом
современной электроники. Они широко используются в полупроводниковой технологии …