Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory
owing to its outstanding performance such as low power consumption, fast speed, and high …
owing to its outstanding performance such as low power consumption, fast speed, and high …
Integrated memory devices based on 2D materials
With the advent of the Internet of Things and big data, massive data must be rapidly
processed and stored within a short timeframe. This imposes stringent requirements on …
processed and stored within a short timeframe. This imposes stringent requirements on …
High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
Layered thio-and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising
building blocks for next-generation nonvolatile memory devices. However, because of the …
building blocks for next-generation nonvolatile memory devices. However, because of the …
Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors
Brain‐inspired neuromorphic computing hardware based on artificial synapses offers
efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry …
efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry …
Robust switchable polarization and coupled electronic characteristics of magnesium-doped zinc oxide
Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and
is critical for the development of low-energy nanoelectronics and neuromorphic applications …
is critical for the development of low-energy nanoelectronics and neuromorphic applications …
Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In2Se3
X Li, S Li, J Tian, F Lyu, J Liao… - Advanced Functional …, 2024 - Wiley Online Library
Abstract 2D layered semiconductors with excellent light− matter interaction and atomic‐
scale thickness have been envisioned as promising candidates for more than Moore and …
scale thickness have been envisioned as promising candidates for more than Moore and …
Flexible memristor-based nanoelectronic devices for wearable applications: a review
Z Rao, X Wang, S Mao, J Qin, Y Yang… - ACS Applied Nano …, 2023 - ACS Publications
In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …
devices, wearable electronic products can effectively improve work efficiency and quality of …
Nonvolatile Ferroelectric Memory with Lateral β/α/β In2Se3 Heterojunctions
S Wan, Q Peng, Z Wu, Y Zhou - ACS Applied Materials & …, 2022 - ACS Publications
The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has
resulted in a surge of applied research in electronics with nonvolatile functionality. However …
resulted in a surge of applied research in electronics with nonvolatile functionality. However …
Halide-perovskite-based memristor devices and their application in neuromorphic computing
Advanced intelligent systems, including memristors and neuromorphic devices, that render
high speed and consume little power are getting increasing attention due to the limitations of …
high speed and consume little power are getting increasing attention due to the limitations of …
Light induced photovoltaic and pyroelectric effects in ferroelectric BaTiO3 film based Schottky interface for self‐powered and flexible multi‐modal logic gates
Optoelectronic logic gates have emerged as one of the key candidates for the creation of
next generation logic devices. However, current optoelectronic logic gates can provide only …
next generation logic devices. However, current optoelectronic logic gates can provide only …