Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun… - InfoMat, 2022 - Wiley Online Library
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory
owing to its outstanding performance such as low power consumption, fast speed, and high …

Integrated memory devices based on 2D materials

F Xue, C Zhang, Y Ma, Y Wen, X He, B Yu… - Advanced …, 2022 - Wiley Online Library
With the advent of the Internet of Things and big data, massive data must be rapidly
processed and stored within a short timeframe. This imposes stringent requirements on …

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

Y Ma, Y Yan, L Luo, S Pazos, C Zhang, X Lv… - Nature …, 2023 - nature.com
Layered thio-and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising
building blocks for next-generation nonvolatile memory devices. However, because of the …

Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors

Y Chen, D Li, H Ren, Y Tang, K Liang, Y Wang, F Li… - Small, 2022 - Wiley Online Library
Brain‐inspired neuromorphic computing hardware based on artificial synapses offers
efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry …

Robust switchable polarization and coupled electronic characteristics of magnesium-doped zinc oxide

H Zhang, A Alanthattil, RF Webster, D Zhang… - ACS …, 2023 - ACS Publications
Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and
is critical for the development of low-energy nanoelectronics and neuromorphic applications …

Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In2Se3

X Li, S Li, J Tian, F Lyu, J Liao… - Advanced Functional …, 2024 - Wiley Online Library
Abstract 2D layered semiconductors with excellent light− matter interaction and atomic‐
scale thickness have been envisioned as promising candidates for more than Moore and …

Flexible memristor-based nanoelectronic devices for wearable applications: a review

Z Rao, X Wang, S Mao, J Qin, Y Yang… - ACS Applied Nano …, 2023 - ACS Publications
In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …

Nonvolatile Ferroelectric Memory with Lateral β/α/β In2Se3 Heterojunctions

S Wan, Q Peng, Z Wu, Y Zhou - ACS Applied Materials & …, 2022 - ACS Publications
The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has
resulted in a surge of applied research in electronics with nonvolatile functionality. However …

Halide-perovskite-based memristor devices and their application in neuromorphic computing

S Satapathi, K Raj, Yukta, MA Afroz - Physical Review Applied, 2022 - APS
Advanced intelligent systems, including memristors and neuromorphic devices, that render
high speed and consume little power are getting increasing attention due to the limitations of …

Light induced photovoltaic and pyroelectric effects in ferroelectric BaTiO3 film based Schottky interface for self‐powered and flexible multi‐modal logic gates

H Dan, H Li, L Xu, C Guo, CR Bowen, Y Yang - InfoMat, 2024 - Wiley Online Library
Optoelectronic logic gates have emerged as one of the key candidates for the creation of
next generation logic devices. However, current optoelectronic logic gates can provide only …