Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven
largely by the increasing demand for an efficient way to control and distribute power in the …

The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits
over a separate IGBT and diode solution and has the potential to become the dominant …

A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (CSE-SJ-
IGBT) is proposed and investigated. In the CSE-SJ-IGBT, the p-pillar is connected to the …

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …

The aim of this paper is to demonstrate the application of the superjunction (SJ) design in an
insulated gate bipolar transistor (IGBT). Bipolar conduction is present and enhanced at the …

To reduce switching loss, an insulated gate bipolar transistor (IGBT) with an inner primary
blocking junction (IPBJ) is proposed and investigated. By inserting a P-drift between the N …

A superjunction insulated gate bipolar transistor (SJ-IGBT) featuring a self-adaptive hole-
extracting (SAHE) path is proposed and investigated by simulation. The SAHE path is …

Superjunction (SJ) is one of the most innovative concepts in the field of power
semiconductor devices and is often referred to as a" milestone" in power MOS. Its balanced …

In this paper, we investigate the performance of the three-phase ac-ac matrix converter (MC)
utilizing the novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor …

In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-
gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce>; 0 in a …