Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

Книга посвящена анализу современного состояния, проблем и перспектив развития
микроэлектронной элементной базы радиоэлектронной аппаратуры ракетно …

Quantitative predictions of defect properties in semiconductors using density functional
theory have been crippled by two issues: the supercell approximation, which has incorrect …

A center from the family of “fourfold coordinated (FFC) defects”, previously predicted
theoretically, has been experimentally identified in crystalline silicon. It is shown that the …

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research
(CERN) addresses some of today's most fundamental questions of particle physics, like the …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

In this work the thermal kinetics of the transformation from the divacancy (V 2) to the
divacancy-oxygen (V 2 O) complex has been studied in detail, and activation energies,(E a) …

The trivacancy (V 3) in silicon has been recently shown to be a bistable center in the neutral
charge state, with a fourfold-coordinated configuration, V 3 [FFC], lower in energy than the …

A deep level transient spectroscopy (DLTS) study of electronic defect levels in 15 MeV
electron irradiated n-type float-zone Si samples with different oxygen contents has been …

After low dose electron irradiation, annealing kinetics of divacancy-oxygen (V 2 O) and
vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and …