Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
[HTML][HTML] Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
Tunnel junction engineered photocarrier dynamics in epitaxial semiconductor nanowires for efficient and ultrafast photoelectrochemical photodetectors
M Fathabadi, S Zhao - ACS Photonics, 2023 - ACS Publications
Photodetection using photoelectrochemical (PEC) principles is an emerging field in
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …
Ultraviolet light‐emitting diode using nonpolar AlGaN core–shell nanowire heterostructures
Highly efficient nonpolar AlGaN nanowire ultraviolet light‐emitting diode is developed,
wherein core–shell AlGaN multiple quantum well layers are incorporated in the nonpolar …
wherein core–shell AlGaN multiple quantum well layers are incorporated in the nonpolar …
Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters
p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long
been a scientific and engineering problem. The challenges arise from the large activation …
been a scientific and engineering problem. The challenges arise from the large activation …
Polar and semipolar GaN/Al0. 5Ga0. 5N nanostructures for UV light emitters
J Brault, D Rosales, B Damilano… - Semiconductor …, 2014 - iopscience.iop.org
Al x Ga 1− x N-based ultra-violet (UV) light emitting diodes (LEDs) are seen as the best
solution for the replacement of traditional mercury lamp technology. By adjusting the Al …
solution for the replacement of traditional mercury lamp technology. By adjusting the Al …
Quantum dot-like behavior of compositional fluctuations in AlGaN nanowires
M Belloeil, B Gayral, B Daudin - Nano Letters, 2016 - ACS Publications
We report on the structural and optical properties of Al x Ga1–x N nanowire sections grown
by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template …
by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template …
Al (Ga) N nanowire deep ultraviolet optoelectronics
In this chapter, we review the recent progress made on the growth and characterization of Al
(Ga) N nanowires and related optoelectronic devices, with a focus on Al-rich Al (Ga) N …
(Ga) N nanowires and related optoelectronic devices, with a focus on Al-rich Al (Ga) N …
Impact of nitride and temperature treatment for AlGaN thin films
Recent developments of wide bandgap devices using AlGaN thin films have opened
discussions about this ternary alloy's fabrication methods. The growth of GaN-based thin …
discussions about this ternary alloy's fabrication methods. The growth of GaN-based thin …
Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals
RR Sumathi - Applied Physics A, 2021 - Springer
Aluminium nitride (AlN) is a futuristic material for efficient next-generation high-power
electronic and optoelectronic applications. Sublimation growth of AlN single crystals with …
electronic and optoelectronic applications. Sublimation growth of AlN single crystals with …