Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

S Zhao, AT Connie, MHT Dastjerdi, XH Kong… - Scientific reports, 2015 - nature.com
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …

[HTML][HTML] Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski… - Apl Materials, 2016 - pubs.aip.org
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …

Tunnel junction engineered photocarrier dynamics in epitaxial semiconductor nanowires for efficient and ultrafast photoelectrochemical photodetectors

M Fathabadi, S Zhao - ACS Photonics, 2023 - ACS Publications
Photodetection using photoelectrochemical (PEC) principles is an emerging field in
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …

Ultraviolet light‐emitting diode using nonpolar AlGaN core–shell nanowire heterostructures

YH Ra, S Kang, CR Lee - Advanced Optical Materials, 2018 - Wiley Online Library
Highly efficient nonpolar AlGaN nanowire ultraviolet light‐emitting diode is developed,
wherein core–shell AlGaN multiple quantum well layers are incorporated in the nonpolar …

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

C Zhao, M Ebaid, H Zhang, D Priante, B Janjua… - Nanoscale, 2018 - pubs.rsc.org
p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long
been a scientific and engineering problem. The challenges arise from the large activation …

Polar and semipolar GaN/Al0. 5Ga0. 5N nanostructures for UV light emitters

J Brault, D Rosales, B Damilano… - Semiconductor …, 2014 - iopscience.iop.org
Al x Ga 1− x N-based ultra-violet (UV) light emitting diodes (LEDs) are seen as the best
solution for the replacement of traditional mercury lamp technology. By adjusting the Al …

Quantum dot-like behavior of compositional fluctuations in AlGaN nanowires

M Belloeil, B Gayral, B Daudin - Nano Letters, 2016 - ACS Publications
We report on the structural and optical properties of Al x Ga1–x N nanowire sections grown
by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template …

Al (Ga) N nanowire deep ultraviolet optoelectronics

S Zhao, Z Mi - Semiconductors and Semimetals, 2017 - Elsevier
In this chapter, we review the recent progress made on the growth and characterization of Al
(Ga) N nanowires and related optoelectronic devices, with a focus on Al-rich Al (Ga) N …

Impact of nitride and temperature treatment for AlGaN thin films

R Garcia-Perez, J Castillo, S Datta, P Biswas… - Bulletin of Materials …, 2022 - Springer
Recent developments of wide bandgap devices using AlGaN thin films have opened
discussions about this ternary alloy's fabrication methods. The growth of GaN-based thin …

Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals

RR Sumathi - Applied Physics A, 2021 - Springer
Aluminium nitride (AlN) is a futuristic material for efficient next-generation high-power
electronic and optoelectronic applications. Sublimation growth of AlN single crystals with …