Plasma curing of MSQ-based porous low-k film materials

Q Han, C Waldfried, O Escorcia, R Albano… - US Patent …, 2004 - Google Patents
Low dielectric constant film materials with improved elastic modulus. The method of making
such film materials involves providing a porous methyl silsesquioxane based dielectric film …

Method of eliminating residual carbon from flowable oxide fill

L Li, W Li - US Patent 7,205,248, 2007 - Google Patents
US7205248B2 - Method of eliminating residual carbon from flowable oxide fill - Google Patents
US7205248B2 - Method of eliminating residual carbon from flowable oxide fill - Google Patents …

Adhesion between carbon doped oxide and etch stop layers

A Ott, A Jain, Y Zhou, J Xu - US Patent App. 10/683,759, 2005 - Google Patents
The invention forms a graded modified layer in a Substrate by exposing the Substrate to
hydrogen plasma. Methyl groups may be removed from carbon doped oxide in the Substrate …

Plasma processes for depositing low dielectric constant films

D Cheung, WF Yau, RP Mandal, S Jeng… - US Patent …, 2003 - Google Patents
(63) Continuation of application No. 09/247.381, filed on Feb. 10, 1999, now Pat. No.
6,348,725, which is a continuation-(List continued on next page.) in-part of application No …

Composite and method for producing the same

H Fushimi, E Mikami, H Tanaka… - US Patent 10,532,545, 2020 - Google Patents
It is an object to provide a composite in which the adhesion between a sheet layer and a
curable resin layer or a film layer is high, and which has high strength and high …

Dielectric layer liner for an integrated circuit structure

SW Russell, WW Lee - US Patent 6,774,489, 2004 - Google Patents
According to the present invention, disadvantages and problems associated with previous
integrated circuit Struc tures have been Substantially reduced or eliminated. According to …

Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds

D Cheung, WF Yau, RR Mandal - US Patent 6,660,663, 2003 - Google Patents
A method and apparatus for depositing a low dielectric constant film by reaction of an
organosilane or organosiloxane compound and an oxidizing gas at a low RF power level …

Plasma processes for depositing low dielectric constant films

D Cheung, WF Yau, RP Mandal, S Jeng… - US Patent …, 2003 - Google Patents
A method and apparatus for depositing a low dielectric constant film by reaction of an
organosilicon compound and an oxidizing gas at a constant RF power level from about 10W …

Method of depositing a low dielectric with organo silane

WF Yau, D Cheung, S Jeng, K Liu, YC Yu - US Patent 6,770,556, 2004 - Google Patents
6,176,198 B1 1/2001 Kao et al............ 118/723 ME EP 0 840 365 5/1998......... H01L/21/311
6,238,751 B1 5/2001 Mountsier....... 427/574 EP 0 849 789 6/1998.. H01L/21/768 6,245,690 …

Nitrogen-free dielectric anti-reflective coating and hardmask

BH Kim, S Rathi, SH Ahn, CD Bencher… - US Patent …, 2005 - Google Patents
Methods are provided for depositing a dielectric material. The dielectric material may be
used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for …