The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-
effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 …

Resonance Raman (RR) spectroscopy has several advantages over the normal Raman
spectroscopy (RS) widely used for in situ characterization of solid catalysts and catalytic …

We performed hybrid functional calculations of native point defects and dangling bonds
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …

Tungsten oxide (WO x) can be incorporated into amorphous/crystalline silicon
heterojunction solar cells as hole contact and for interface modification between p-type …

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for
modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer …

Diagnosing of the interface quality and the interactions between insulators and
semiconductors is significant to achieve the high performance of nanodevices. Herein, low …

Al 2 O 3 synthesized by atomic layer deposition (ALD) on H-terminated Si (100) exhibits a
very thin (∼ 1 nm) interfacial SiO x layer. At this interface, a high fixed negative charge …

Two-dimensional tellurium (2D Te) is a promising material for functional optoelectronic
applications due to its narrow band gap and high carrier mobility. However, its light− matter …