The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

This article reviews trends, architectures, and recent developments in CMOS-based supply
modulators (SM) used for envelope-tracking power amplifiers (ET-PAs). This review details …

As mobile communication systems evolve to handle higher data rates, their modulation
schemes only become more complicated, generating signals with large bandwidth and high …

This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for
efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty …

A CMOS power amplifier integrated circuit with an optimized dual-mode supply modulator is
presented. The dual-mode supply modulator, based on a hybrid buck converter consisting of …

This paper presents a linear Doherty power amplifier (PA) with enhanced back-off efficiency
mode for handset applications. For linear Doherty operation, we analyze the gain …

A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive
biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with …

A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over
a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip …

This paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2-
μm InGaP/GaAs HBT process for multi-band long-term evolution (LTE) applications. It …

In this paper, a two-stage broadband CMOS stacked FET RF power amplifier (PA) with a
reconfigurable interstage matching network is developed for wideband envelope tracking …