Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration
A silicon-based monolithic laser source has long been envisioned as a key enabling
component for large-scale electronic–photonic integration in future generations of high …
component for large-scale electronic–photonic integration in future generations of high …
Population inversion and giant bandgap renormalization in atomically thin WS2 layers
Control of the optical properties of matter on ultrashort timescales is of both fundamental
interest and central importance for applications in photonics. It is desirable to achieve …
interest and central importance for applications in photonics. It is desirable to achieve …
Emerging technologies in Si active photonics
Silicon photonics for synergistic electronic–photonic integration has achieved remarkable
progress in the past two decades. Active photonic devices, including lasers, modulators, and …
progress in the past two decades. Active photonic devices, including lasers, modulators, and …
Optical spin injection and spin lifetime in Ge heterostructures
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
[HTML][HTML] Towards monolithic integration of germanium light sources on silicon chips
S Saito, AZ Al-Attili, K Oda… - … Science and Technology, 2016 - iopscience.iop.org
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
All-optical coherent control of vacuum Rabi oscillations
When an atom strongly couples to a cavity, the two systems can coherently exchange a
single quantum excitation through the process of vacuum Rabi oscillation. Controlling this …
single quantum excitation through the process of vacuum Rabi oscillation. Controlling this …
[HTML][HTML] Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
Preparation of entangled states by adiabatic passage
Preparation of Entangled States by Adiabatic Passage Page 1 VOLUME 87, NUMBER 13
PHYSICAL REVIEW LETTERS 24SEPTEMBER 2001 Preparation of Entangled States by …
PHYSICAL REVIEW LETTERS 24SEPTEMBER 2001 Preparation of Entangled States by …
[HTML][HTML] Nonlinear XUV signal generation probed by transient grating spectroscopy with attosecond pulses
Nonlinear spectroscopies are utilized extensively for selective measurements of chemical
dynamics in the optical, infrared, and radio-frequency regimes. The development of these …
dynamics in the optical, infrared, and radio-frequency regimes. The development of these …
Dynamic Stark effect in strongly coupled microcavity exciton polaritons
We present experimental observations of a nonresonant dynamic Stark shift in strongly
coupled microcavity quantum well exciton polaritons—a system which provides a rich variety …
coupled microcavity quantum well exciton polaritons—a system which provides a rich variety …