The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at …

The initial oxidation of 4H-SiC (0001) surfaces with C-related point defects (Surf CD) is
studied by using first-principles coupled with thermodynamics calculations to gain deeper …

The high density of interface and border traps is responsible for the reduced mobility and
threshold voltage instabilities in state-of-the-art SiC power devices. In this work, we have …

A novel SiC trench superjunction MOSFET with an integrated unipolar channel diode and
three-level buffer (DioSJ-MOS) is proposed, which features an additional planar channel …

Very fast interface traps have recently been suggested to be the main cause behind poor
channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has …

Very fast interface traps have recently been suggested to be the main cause behind the
rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect …

SiC MOSFET has become one of the most promising power devices due to its significant
advantages over its Si counterparts. However, the stability of threshold voltage is still of great …

This article presents an innovative approach to achieve a high channel mobility for 4H-SiCp-
MOSFET via dielectric-semiconductor interface engineering involving atomic layer …

Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been
the main factor hampering development of low power devices (300–650 V). A very fast …

The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed
gate oxides is still far below the theoretical limit. It has been suggested that the main reason …