Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
TCAD simulation of the single event effects in normally-OFF GaN transistors after heavy ion radiation
M Zerarka, P Austin, A Bensoussan… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
Electrical behavior of commercial off-the-shelf normally-off GaN power transistors under
heavy ion irradiation is presented based on technology computer aided design numerical …
heavy ion irradiation is presented based on technology computer aided design numerical …
Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG AlxGa1-xN Channel
S Liu, J Zhang, S Zhao, L Shu, X Song… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the single event burnout (SEB) performances for 2DEG Al x channel p-GaN
gate high electron mobility transistors (HEMTs) have been investigated comprehensively to …
gate high electron mobility transistors (HEMTs) have been investigated comprehensively to …
Single event burnout hardening of enhancement mode HEMTs with double field plates
Z Zhen, C Feng, Q Wang, D Niu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Single event burnout (SEB) of enhancement mode GaN high-electron mobility transistors
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …
Simulation study of single-event burnout in hardened GaN MISFET
XX Fei, Y Wang, B Sun, J Xing, W Wei, CY Li - Radiation Physics and …, 2023 - Elsevier
This paper presents simulation results of a single event burnout (SEB), for a hardened GaN
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
Research of single-event burnout and hardening of AlGaN/GaN-based MISFET
This brief first time presents single-event burnout (SEB) simulation results for conventional
AlGaN/GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET …
AlGaN/GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET …
Simulation study of single-event burnout in GaN MISFET with Schottky element
Y Wang, XX Fei, X Wu, X Li, J Yang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we investigate a new hardened GaN MISFET with an integrated Schottky
contact (SC-MISFET). The new device architecture significantly improves the single-event …
contact (SC-MISFET). The new device architecture significantly improves the single-event …