A review of hot carrier degradation in n-channel MOSFETs—Part I: Physical mechanism
S Mahapatra, U Sharma - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
A review of NBTI mechanisms and models
S Mahapatra, N Parihar - Microelectronics Reliability, 2018 - Elsevier
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions
Threshold voltage shift (ΔV T) due to negativebias temperature instability (NBTI) in p-
FinFETs with replacement metal gate-based high-k metal gate process is measured using …
FinFETs with replacement metal gate-based high-k metal gate process is measured using …
A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
A modeling framework for NBTI degradation under dynamic voltage and frequency scaling
A modeling framework is proposed to predict the degradation and recovery of threshold
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Recent advances in EM and BTI induced reliability modeling, analysis and optimization
In this article, we will present recent advances in reliability effects such as electromigration
on interconnects and Negative/Positive Bias Temperature Instability (N/P BTI) effects on …
on interconnects and Negative/Positive Bias Temperature Instability (N/P BTI) effects on …
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, part-I: DC stress and recovery
An ultrafast (10-μs delay) measurement technique is used to characterize the negative bias
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …