A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
Investigation of thermally induced threshold voltage shift in normally-OFF p-GaN gate HEMTs
H Wang, Y Lin, J Jiang, D Dong, F Ji… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the thermally induced threshold voltage () shift was investigated on two types
of normally-OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an …
of normally-OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an …
High-Power -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic
W Luo, H Liu, Z Zhang, P Sun… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
A high-power X-band GaN-based 5-b digital phase shifter with control logic circuit on-chip is
demonstrated for the first time, which is implemented with monolithic integrated GaN E/D …
demonstrated for the first time, which is implemented with monolithic integrated GaN E/D …
Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors
L Li, J Chen, Z Liu, T Que, X Gu, L He, Y Liu - Applied Surface Science, 2019 - Elsevier
In the present study, the reliability of transparent NiO gated AlGaN/GaN heterostructure field-
effect transistors have been investigated. Compared with the TiN Schottky gated device, the …
effect transistors have been investigated. Compared with the TiN Schottky gated device, the …
Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications
PC Chou, SH Chen, TE Hsieh, S Cheng, JA Del Alamo… - Energies, 2017 - mdpi.com
This paper reports an extensive analysis of the physical mechanisms responsible for the
failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors …
failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors …
On the physics link between time-dependent gate breakdown and electroluminescence in Schottky-type p-GaN gate HEMTs
X Tang, Y Liu, H Wang, D Dong, Y Yin… - 2022 IEEE 34th …, 2022 - ieeexplore.ieee.org
In this paper, Schottky-type p-GaN gate HEMTs with semi-transparent gate electrodes were
fabricated. The time-dependent forward gate breakdown (TDB) was investigated and a two …
fabricated. The time-dependent forward gate breakdown (TDB) was investigated and a two …
Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis
A normally-off p-GaN/AlGaN/GaN high-electron-mobility transistor (p-GaN HEMTs) with a
semitransparent gate electrode was investigated. Under forward gate bias …
semitransparent gate electrode was investigated. Under forward gate bias …
Impact of Vth Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC
The impact of dynamic threshold voltage () on the real-time characteristics of GaN direct-
coupled FET logic (DCFL) inverter is investigated using an in-situ voltage tracking method …
coupled FET logic (DCFL) inverter is investigated using an in-situ voltage tracking method …
Investigation on LG = 50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with afT/fmax of 264/312 GHz for beyond 5G (B5G) Applications
The impact of mini-field plated tapered T-Gate and conventional gate on LG= 50 nm
AlGaN/GaN on-Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF …
AlGaN/GaN on-Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF …
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
Z Gao, MF Romero, MÁ Pampillón… - … on Electron Devices, 2016 - ieeexplore.ieee.org
Thermal stability of AlGaN/GaN metal–oxide–semiconductor high-electron mobility
transistors (MOS-HEMTs) and diodes using Gd 2 O 3 is investigated by means of different …
transistors (MOS-HEMTs) and diodes using Gd 2 O 3 is investigated by means of different …