Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan, A Hashimoto, A Yamamoto - Journal of applied physics, 2003 - pubs.aip.org
During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …
remarkable. There have been significant improvements in the growth of InN films. High …
Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review
SK O'leary, BE Foutz, MS Shur, LF Eastman - Journal of Materials Science …, 2006 - Springer
The III–V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have,
for some time now, been recognized as promising materials for novel electronic and …
for some time now, been recognized as promising materials for novel electronic and …
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti… - … on electron devices, 2001 - ieeexplore.ieee.org
We present a comprehensive study of the transport dynamics of electrons in the ternary
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …
Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study
Using first-principles calculation within density functional theory (DFT), we study the gas
(CO, NH 3, H 2 S, NO 2, NO, SO 2) adsorption properties on the surface of single-layer …
(CO, NH 3, H 2 S, NO 2, NO, SO 2) adsorption properties on the surface of single-layer …
[图书][B] Analysis and simulation of heterostructure devices
V Palankovski, R Quay - 2004 - books.google.com
Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
H Lu, WJ Schaff, J Hwang, H Wu, G Koley… - Applied Physics …, 2001 - pubs.aip.org
The effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
MBE is studied. Using an AlN buffer layer can significantly improve the structural and …
MBE is studied. Using an AlN buffer layer can significantly improve the structural and …
Low-field electron mobility in wurtzite InN
VM Polyakov, F Schwierz - Applied physics letters, 2006 - pubs.aip.org
We report on the low-field electron mobility in bulk wurtzite InN at room temperature and
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …
Optical excitations of graphene-like materials: group III-nitrides
NT Han, VK Dien, TR Chang, MF Lin - Nanoscale Advances, 2023 - pubs.rsc.org
By using first-principles calculations, we have studied the electronic and optical
characteristics of group III-nitrides, such as BN, AlN, GaN, and InN monolayers. The …
characteristics of group III-nitrides, such as BN, AlN, GaN, and InN monolayers. The …
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
This work presents nonlocal pseudopotential calculations based on realistic, effective atomic
potentials of the wurtzite phase of GaN, InN, and AlN. A formulation formulation for the model …
potentials of the wurtzite phase of GaN, InN, and AlN. A formulation formulation for the model …
Effective mass of InN epilayers
SP Fu, YF Chen - Applied Physics Letters, 2004 - pubs.aip.org
We report on the study of plasma edge absorption of InN epilayers with free electron
concentration ranging from 3.5× 10 17 to 5× 10 19 cm− 3. Together with the previously …
concentration ranging from 3.5× 10 17 to 5× 10 19 cm− 3. Together with the previously …