A review of high-power semiconductor optical amplifiers in the 1550 nm band
H Tang, C Yang, L Qin, L Liang, Y Lei, P Jia, Y Chen… - Sensors, 2023 - mdpi.com
The 1550 nm band semiconductor optical amplifier (SOA) has great potential for
applications such as optical communication. Its wide-gain bandwidth is helpful in expanding …
applications such as optical communication. Its wide-gain bandwidth is helpful in expanding …
A novel semiconductor-based, fully incoherent amplified spontaneous emission light source for ghost imaging
S Hartmann, W Elsäßer - Scientific Reports, 2017 - nature.com
Initially, ghost imaging (GI) was demonstrated with entangled light from parametric down
conversion. Later, classical light sources were introduced with the development of thermal …
conversion. Later, classical light sources were introduced with the development of thermal …
[HTML][HTML] Active Region Mode Control for High-Power, Low-Linewidth Broadened Semiconductor Optical Amplifiers for Light Detection and Ranging
H Tang, M Zhang, L Liang, T Zhang, L Qin, Y Song… - Sensors, 2024 - mdpi.com
This paper introduces a semiconductor optical amplifier (SOA) with high power and narrow
linewidth broadening achieved through active region mode control. By integrating mode …
linewidth broadening achieved through active region mode control. By integrating mode …
High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures
S Haggett, M Krakowski, I Montrosset, MA Cataluna - Optics Express, 2014 - opg.optica.org
A high-power tunable external cavity laser configuration with a tapered quantum-dot
semiconductor optical amplifier at its core is presented, enabling a record output power for a …
semiconductor optical amplifier at its core is presented, enabling a record output power for a …
[PDF][PDF] Classical ghost imaging with opto-electronic light sources: novel and highly incoherent concepts
S Blumenstein - 2017 - tuprints.ulb.tu-darmstadt.de
In conventional imaging systems, the emitted light from a source interacts with an object and
the intensity of the transmitted or reflected light is captured by a spatially resolving detector …
the intensity of the transmitted or reflected light is captured by a spatially resolving detector …
Effect of Nonuniform Current Injection On a Tapered-Waveguide Quantum Dot Semiconductor Optical Amplifier
T Kanimozhi - 2023 2nd International Conference on Vision …, 2023 - ieeexplore.ieee.org
Quantum-dot semiconductor optical amplifiers (QD-SOAs) possess many advantages
compared to conventional SOAs like high gain, wide-bandwidth of operation, and ultrafast …
compared to conventional SOAs like high gain, wide-bandwidth of operation, and ultrafast …
Modified Drude model for free-carrier absorption due to bound-to-continuum transition in quantum-dot semiconductor optical amplifier
X Li, T Wang, C Dong, J Tang, B Liu, Y He - Journal of Applied Physics, 2013 - pubs.aip.org
Within the framework of the second-order perturbation theory, a model is presented to
calculate the cross-section of the free-carrier absorption (FCA) due to phonon-assisted …
calculate the cross-section of the free-carrier absorption (FCA) due to phonon-assisted …
High-performance quantum well amplifiers for the WDM system
M Xia, H Ghafouri-Shiraz - 2015 36th IEEE Sarnoff Symposium, 2015 - ieeexplore.ieee.org
This paper presents a new high-performance quantum well amplifier with longitudinal non-
uniform distributed compressive strain for the WDM system. Quantum well transmission line …
uniform distributed compressive strain for the WDM system. Quantum well transmission line …
High-power ultrafast and broadly-tunable quantum-dot lasers
MA Cataluna, Y Ding, SE Haggett… - Quantum Sensing …, 2015 - spiedigitallibrary.org
High-power ultrafast and broadly-tunable quantum-dot lasers SPIE.org SPIE digital library SPIE
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