Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green
bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including …

Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic
Maxwell–Bloch (MB) equations are a widely used semiclassical and semi …

Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity
surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair In Ga N∕ Ga N …

GaN-based light emitting diodes for the blue-green wavelength regime are known to suffer
from the so-called “efficiency droop.” The internal quantum efficiency peaks at very low …

Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …

We have achieved continuous‐wave (CW) operation of gallium nitride (GaN)‐based vertical‐
cavity surface‐emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) …

Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …

P-type doping in the last barrier is proposed to improve the efficiency droop of the blue
InGaN light-emitting diodes (LEDs). The light-current curves, energy band diagrams, carrier …

This review introduces the latest progress on gallium nitride (GaN)-based visible vertical-
cavity surface-emitting lasers (VCSELs) with features such as plane and curved distributed …