Method for fabricating a semiconductor structure including a metal oxide interface with silicon
3,617,951 A 11/1971 Anderson 3,670,213 A 6/1972 Nakawaga et al. 3,766,370 A 10/1973
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Method for improved growth of semipolar (Al, In, Ga, B) N
A method for improved growth of a semipolar (Al, In, Ga, B) N semiconductor thin film using
an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting …
an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting …
Nitride semiconductor laser device
T Kozaki, M Sano, S Nakamura… - US Patent 7,496,124, 2009 - Google Patents
(57) ABSTRACT A nitride semiconductor laser device has an improved stabil ity of the lateral
mode under high output power and a longer lifetime, so that the device can be applied to …
mode under high output power and a longer lifetime, so that the device can be applied to …
Gallium nitride materials and methods
TW Weeks Jr, EL Piner, T Gehrke… - US Patent …, 2003 - Google Patents
US6617060B2 - Gallium nitride materials and methods - Google Patents US6617060B2 -
Gallium nitride materials and methods - Google Patents Gallium nitride materials and methods …
Gallium nitride materials and methods - Google Patents Gallium nitride materials and methods …
Gallium nitride materials and methods
TW Weeks Jr, EL Piner, T Gehrke… - US Patent …, 2003 - Google Patents
The invention provides semiconductor materials including a gallium nitride material layer
formed on a silicon substrate and methods to form the semiconductor materials. The …
formed on a silicon substrate and methods to form the semiconductor materials. The …
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan… - US Patent …, 2006 - Google Patents
Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
Semiconductor device-based sensors
JW Johnson, EL Piner, KJ Linthicum - US Patent 7,361,946, 2008 - Google Patents
4411, 741. A 10/1983 Janata associated with the same are provided. The sensors include
4,636,827 A 1, 1987 Rudolf regions that can interact with chemical species being 4, 791465 …
4,636,827 A 1, 1987 Rudolf regions that can interact with chemical species being 4, 791465 …
Gallium nitride materials including thermally conductive regions
R Borges, KJ Linthicum, TW Weeks… - US Patent 6,956,250, 2005 - Google Patents
5,200,641 A 4/1993 Kosaki Semiconductor devices may utilize features of the invention
5,239,188 A* 8/1993 Takeuchi et al............... 257/76 including devices on Silicon Substrates …
5,239,188 A* 8/1993 Takeuchi et al............... 257/76 including devices on Silicon Substrates …
Reconfigurable systems using hybrid integrated circuits with optical ports
MG Taylor, CW Shanley, WJ Ooms - US Patent 6,410,941, 2002 - Google Patents
A hybrid integrated circuit is provided that has a monocrystalline substrate such as silicon
and a compound semiconductor layer such as gallium arsenide or indium phosphide. An …
and a compound semiconductor layer such as gallium arsenide or indium phosphide. An …
Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
RM Emrick, SK Rockwell, JE Holmes - US Patent 6,646,293, 2003 - Google Patents
3,914,137 3,935,031 4,006,989 4,084,130 4,120,588 4,146.297 4,174,422 4,242,595
4,284,329 4,289.920 4,297,656 4,392.297 4,398,342 4,404.265 4,424,589 4,439,014 …
4,284,329 4,289.920 4,297,656 4,392.297 4,398,342 4,404.265 4,424,589 4,439,014 …