Lead chalcogenides have long been used for space‐based and thermoelectric remote
power generation applications, but recent discoveries have revealed a much greater …

In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

Thermoelectric materials allow for direct conversion between heat and electricity, offering
the potential for power generation. The average dimensionless figure of merit ZT ave …

Tuning band energies of semiconductors through strain engineering can significantly
enhance their electronic, photonic, and spintronic performances. Although low-dimensional …

The main purpose of this book is to provide a comprehensive treatment of the materials
aspects of group-IV, III− V and II− VI semiconductor alloys used in various electronic and …

GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

We present density functional theory calculations of the phonon-limited mobility in n-type
monolayer graphene, silicene, and MoS 2. The material properties, including the electron …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Germanium is a widely used material for tunnel FETs because of its small band gap and
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …