Insulated gate and surface passivation structures for GaN-based power transistors

Z Yatabe, JT Asubar, T Hashizume - Journal of Physics D …, 2016 - iopscience.iop.org
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

GaN-based power devices: Physics, reliability, and perspectives

M Meneghini, C De Santi, I Abid, M Buffolo… - Journal of Applied …, 2021 - pubs.aip.org
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Stability and reliability of lateral GaN power field-effect transistors

JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

H Jiang, C Liu, Y Chen, X Lu… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

Border traps and bias-temperature instabilities in MOS devices

DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

S Kaneki, J Ohira, S Toiya, Z Yatabe, JT Asubar… - Applied physics …, 2016 - pubs.aip.org
Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …

Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs

SW Tang, B Bakeroot, ZH Huang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, the gate current characteristics are investigated to explain the threshold voltage
shift in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate. First, the …

Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ZrO2 Gate Dielectric

H Jiang, CW Tang, KM Lau - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
Enhancement-mode GaN MOS-HEMTs with a uniform threshold voltage (V th~ 2.2±0.25 V at
ID= 1 μA/mm) have been achieved by a recess-free barrier engineering technique in …

Unified mechanism for positive-and negative-bias temperature instability in GaN MOSFETs

A Guo, JA del Alamo - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs
under moderate positive and negative gate bias stress. We investigate the evolution of …

Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices

A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …