The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect
transistor (MOS-HFET) and present the results of the comparative studies of this device and …

We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors
(MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

High electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been
fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity. Due to …

This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from
6.5× 10 16 cm− 3 (lightly doped) to 3.8× 10 19 cm− 3 (heavily doped) were investigated by …

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and
integrated magnetic sensors that can be used to create ultra-low power, high speed …