PtO x Schottky Contacts on Degenerately Doped 2¯ 01 β-Ga2O3 Substrates
Abstract Platinum oxide (PtO x) Schottky contacts on degenerately doped β-Ga2O3
substrates show an increased barrier height of 85% and 64% when compared to nickel and …
substrates show an increased barrier height of 85% and 64% when compared to nickel and …
Ga vacancies as dominant intrinsic acceptors in Sn-doped revealed by positron annihilation spectroscopy
YH Li, Y Dong, GW Xu, YZ Bu, QL Sai, HJ Qi, SB Long… - Physical Review B, 2024 - APS
The conductive properties and defect structure of Sn-doped β-Ga 2 O 3 bulk materials with
different Sn concentrations are studied in this work. The calculations and experiments of …
different Sn concentrations are studied in this work. The calculations and experiments of …
[PDF][PDF] Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications
B Lyon, C DiMarino - Journal of Microelectronics and Electronic …, 2023 - imapsjmep.org
With the advent of ultra-wide bandgap semiconductor materials, such as gallium oxide
(Ga2O3) and aluminum nitride (AlN), higher temperature and higher voltage operation of …
(Ga2O3) and aluminum nitride (AlN), higher temperature and higher voltage operation of …
Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
JA Spencer - 2024 - vtechworks.lib.vt.edu
At the heart of all power electronic systems lies the semiconductor, responsible for passing
large amounts of current at negligible power losses in the on-state, while instantaneously …
large amounts of current at negligible power losses in the on-state, while instantaneously …
Research of over-2kV, 2.35GW/cm2 β-Ga2O3 Vertical Superjunction Schottky Barrier Diodes
M Li, J Yuan, R Peng, L Zhu, S Xu… - 2024 IEEE 2nd …, 2024 - ieeexplore.ieee.org
The ultra-wide bandgap (UWBG) β-Ga 2 O 3 superjunction Schottky diode (SJ-SBD) devices
was studied by simulation. p-NiO was designed as p-pillars structure and embedded within …
was studied by simulation. p-NiO was designed as p-pillars structure and embedded within …
TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga2O3 MOSFET for Terahertz Applications
P Goyal, H Kaur - 2023 IEEE Latin American Electron Devices …, 2023 - ieeexplore.ieee.org
This work presents exhaustive TCAD investigation of Step-Oxide-Dual Material Gate with
Asymmetric Doping engineering on lateral β-Ga_2O_3 MOSFET. The objective of this work …
Asymmetric Doping engineering on lateral β-Ga_2O_3 MOSFET. The objective of this work …
[PDF][PDF] Study of solar blind photodetector based on beta gallium oxide (ꞵ-Ga₂O₃)
A NOUMIDIA - archives.univ-biskra.dz
In recent years, the solar-blind photodetectors based on ꞵ-Ga₂O₃ are attractive due to
their simple fabrication process and its photodetection performance. Our study is about …
their simple fabrication process and its photodetection performance. Our study is about …