Positron annihilation in semiconductors: defect studies
R Krause-Rehberg, HS Leipner - 1999 - books.google.com
The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …
means of positron annihilation. A comprehensive review is given of the different positron …
[PDF][PDF] Review of defect investigations by means of positron annihilation in II-VI compound semiconductors.
R Krause-Rehberg, HS Leipner… - Applied Physics A …, 1998 - researchgate.net
An overview is given on positron annihilation studies of vacancy-type defects in Cd-and Zn-
related II− VIcompound semiconductors. The most noticeable results among the positron …
related II− VIcompound semiconductors. The most noticeable results among the positron …
Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe
P Capper, CD Maxey, CL Jones, JE Gower… - Journal of electronic …, 1999 - Springer
Low temperature thermal treatments of CdHgTe, normally in the presence of mercury vapor,
are still used on both bulk samples and single and multi-layer epitaxial layers to modify or …
are still used on both bulk samples and single and multi-layer epitaxial layers to modify or …
Conductivity type conversion in Hg1-xCdxTe
D Shaw, P Capper - Journal of Materials Science: Materials in Electronics, 2000 - Springer
The Schaake model for the p to n-type conversion in Hg 1-x Cd x Te caused by annealing in
Hg vapor has been extended to obtain an analytic expression for x J 2/t in terms of basic …
Hg vapor has been extended to obtain an analytic expression for x J 2/t in terms of basic …
Activation kinetics of the As acceptor in HgCdTe
D Shaw, P Capper - Journal of Materials Science: Materials in Electronics, 2008 - Springer
The amphoteric model of As in HgCdTe is the basis of an investigation into how the transfer
A ̇ s _\rm Hg → As^ ′ _\rm Te is achieved under Hg saturation and so obtain a method for …
A ̇ s _\rm Hg → As^ ′ _\rm Te is achieved under Hg saturation and so obtain a method for …
[PDF][PDF] AsHg 与VHg 在碲镉汞中掺杂行为第一性原理研究
黄燕， 王子言， 段鹤， 陈效双， 孙立忠… - 中国科学: 物理学力学 …, 2014 - researchgate.net
摘要采用基于密度泛函理论的第一性原理方法, 对碲镉汞材料中两种点缺陷Hg 空位(VHg), As
代Hg 位(AsHg) 及其复合缺陷(AsHg-VHg, AsHg-2VHg) 进行了系统的研究 …
代Hg 位(AsHg) 及其复合缺陷(AsHg-VHg, AsHg-2VHg) 进行了系统的研究 …
Defects in Ion Implanted Hg0. 78Cd0. 22Te Probed by Monoenergetic Positron Beams
AUA Uedono, HEH Ebe, MTM Tanaka… - Japanese journal of …, 1998 - iopscience.iop.org
Defects and their annealing properties in ion implanted Hg 0.78 Cd 0.22 Te were studied
using monoenergetic positron beams. Vacancy-type defects introduced by B+-implantation …
using monoenergetic positron beams. Vacancy-type defects introduced by B+-implantation …
Activation of arsenic in epitaxial Hg1–xCdxTe (MCT)
P Capper, D Shaw - Infrared and Photoelectronic Imagers and …, 2006 - spiedigitallibrary.org
This paper reviews arsenic (As) dopant activation processes in the various forms of epitaxial
MCT. Extrinsic doping of MCT is an important part of MCT technology and As doping is …
MCT. Extrinsic doping of MCT is an important part of MCT technology and As doping is …
Sources of carrier compensation in arsenic-doped HgCdTe
H Duan, YZ Dong, J Luo, Y Huang, XS Chen… - Journal of Physics and …, 2013 - Elsevier
Using first-principles methods, we have investigated structural and electronic properties of
substitutional arsenic donor (AsHg), mercury vacancies (VHg), and their complexes in …
substitutional arsenic donor (AsHg), mercury vacancies (VHg), and their complexes in …
A study of native defects in Ag-doped HgCdTe by positron annihilation
Native defects in undoped and Ag-doped Hg 0.78 Cd 0.22 Te were studied using positron
annihilation technique. For undoped specimens, the concentration of vacancy-type defects …
annihilation technique. For undoped specimens, the concentration of vacancy-type defects …