We report room temperature injection lasing in the yellow–orange spectral range (599–605
nm) in (Al_xGa_1–x) _0. 5In_0. 5P–GaAs diodes with 4 layers of tensile-strained In_yGa_1 …

In this study, it is proposed to implanted nitrogen ions into the high Ga component tensile
strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to …

On the basis of the efficiency function introduced by Kittaneh and Beltagy [18], we compare
the performance of censored samples from lognormal and Weibull distributions as two …

Watt-level yellow emitting lasers are interesting for medical applications, due to their high
hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we …

According to the Department of Energy, lighting accounts for 15% of global electricity
consumption; this results in a substantial need for inexpensive, efficient lighting sources …

We report simulation of the conduction band alignment in tensile–strained GaP–enriched
barrier structures and experimental results on injection lasing in the green–orange spectral …

In this paper, we report the largest bandgap blueshift of 320meV (~ 105nm) novel quantum
well intermixing (QWI) technique in the InGaP/AlInGaP single quantum-well laser structure …

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion
and for many applications where their small size and potential for low cost are required to …

In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI)
technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter …

Lasing in the orange spectral range (599–605 nm) is demonstrated for (Al x Ga 1–x) 0.5 In
0.5 P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs …