Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors
Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for
fabricating a variety of semiconductor nanostructures. Since early investigations in 2000 …
fabricating a variety of semiconductor nanostructures. Since early investigations in 2000 …
Annealed n-TiO2/In2O3 nanowire metal-insulator-semiconductor for highly photosensitive low-noise ultraviolet photodetector
P Pooja, P Chinnamuthu - Journal of Alloys and Compounds, 2021 - Elsevier
Superior performance by annealed TiO 2/In 2 O 3 nanowire (NW) metal-insulator-
semiconductor device, synthesized using electron beam evaporation incorporating catalytic …
semiconductor device, synthesized using electron beam evaporation incorporating catalytic …
Capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature
R Padma, BP Lakshmi, VR Reddy - Superlattices and Microstructures, 2013 - Elsevier
We report on the capacitance–frequency (C–f) and conductance–frequency (G–f)
characteristics of Ir/n-InGaN Schottky diode with various biases and at different temperature …
characteristics of Ir/n-InGaN Schottky diode with various biases and at different temperature …
Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes
All RF sputtering-deposited Pt/SiO 2/n-type indium gallium nitride (n-InGaN) metal–oxide–
semiconductor (MOS) diodes were investigated before and after annealing at 400° C. By …
semiconductor (MOS) diodes were investigated before and after annealing at 400° C. By …
Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered with ZnFe2O4 Doped PVA
JAM Alsmael, SO Tan - IEEE Transactions on Nanotechnology, 2024 - ieeexplore.ieee.org
In this work, Al/p-Si structures with (ZnFe 2 O 4− PVA) interfacial film, which is grown by the
electrospinning-method, have been analyzed by using impedance measurements in the …
electrospinning-method, have been analyzed by using impedance measurements in the …
Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
Tin (Sn) doping in gallium nitride (GaN) has been mainly reported from the theoretical view
only. Based upon the availability of Sn precursor and commercialization, Sn-GaN film has …
only. Based upon the availability of Sn precursor and commercialization, Sn-GaN film has …
Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes
All sputtering-made Pt/n-GaN [metal–semiconductor (MS)] and Pt/SiO 2/n-GaN [metal–oxide–
semiconductor (MOS)] diodes were investigated before and after annealing at 500° C. n …
semiconductor (MOS)] diodes were investigated before and after annealing at 500° C. n …
Temperature dependence of electrical characteristics of n-InxGa1− xN/p-Si hetero-junctions made totally by RF magnetron sputtering
Abstract The n-In x Ga 1− x N/p-Si hetero-junction diodes including their semiconductors
and electrodes were grown directly on p-Si (100) wafer by magnetron sputtering. Targets for …
and electrodes were grown directly on p-Si (100) wafer by magnetron sputtering. Targets for …
The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode
Abstract The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of
annealing temperature on the characteristics of the device. DC Magnetron sputtering …
annealing temperature on the characteristics of the device. DC Magnetron sputtering …
Photoconducting properties of Cd0.4ZnO0.6/p-Si photodiode by sol gel method
Abstract Al/Cd 0.4 ZnO 0.6/p-Si Schottky photodiode was successfully fabricated via sol–gel
process. The current–voltage characteristics of the diode were performed in dark and …
process. The current–voltage characteristics of the diode were performed in dark and …