ABSTRACT A detailed temporal analysis of the spectral diffusion phenomenon in single
photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both …

Gallium nitride (GaN) is an advanced semiconductor primarily known for its current
applications in lasers and high-power electronics. With the availability of various growth …

Autocorrelation measurements are used to reveal the spectral diffusion time scale in the
single photon emission of a GaN interface fluctuation quantum dot. Typical characteristic …

The effect of different growth interruption time on the surface morphology and optical
properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated …

Non-polar nitride single-photon sources are developed in order to minimise the undesired
side effects caused by the internal fields of polar nitrides, while retaining the benefits of high …

Prototype nitride quantum light sources, particularly single-photon emitters, have been
successfully demonstrated, despite the challenges inherent in this complex materials …

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase
epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen …

Spectral diffusion can lead to considerable broadening of the line width of nitride quantum
dots. Here, InGaN quantum dots grown on a nonpolar plane were shown to exhibit a …

Experimental observation of Rabi rotations between an exciton excited state and the crystal
ground state in a single non-polar InGaN quantum dot is presented. The exciton excited …

We report the direct generation of linearly polarized single photons with a deterministic
polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar …