Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
An AlGaN core–shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band
To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV)
spectral range exhibit very low efficiency due to the presence of large densities of defects …
spectral range exhibit very low efficiency due to the presence of large densities of defects …
Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers
We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
[HTML][HTML] Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
In this work, we report on the demonstration of an electrically injected AlGaN nanowire laser
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
[HTML][HTML] Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …
Graded-index separate confinement heterostructure AlGaN nanowires: toward ultraviolet laser diodes implementation
High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …