In this paper, a new efficient technique is used in silicon-on-insulator metal–semiconductor
field-effect transistors (SOI MESFETs) to simultaneously increase the breakdown voltage …

Epitaxially grown single crystal GaP on Si is of considerable interest due to being nearly
lattice matched to Si, making it attractive for III‐V/Si solar cells. GaP has been used as a …

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a 45-nm
silicon-on-insulator CMOS technology available from Global Foundries. MESFETs with gate …

In this paper, we explore the effect of H and its bonding configurations on the defect state
density and orbital localization of hydrogenated amorphous Si (a-Si: H)/crystalline Si (c-Si) …

There is an ever-increasing demand for higher bandwidth and data rate ensuing from
exploding number of radio frequency integrated systems and devices. As stated in the …

Several amorphous silicon structures were generated using a classical molecular dynamics
(MD) protocol of melting and quenching with different quenching rates. An analysis of the …

In this dissertation, I investigate the electronic properties of two important silicon (Si)-based
heterojunctions 1) hydrogenated amorphous silicon/crystalline silicon (a-Si: H/c-Si) which …