This paper summarizes some of the essential aspects of silicon‐nanowire growth and of
their electrical properties. In the first part, a brief description of the different growth …

Semiconductor nanowires are attracting intense interest as a promising material for solar
energy conversion for the new‐generation photovoltaic (PV) technology. In particular, silicon …

Semiconductor nanowires have been the subject of intensive research investment over the
past few decades. Their physical properties afford them applications in a vast network of …

Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

Thermoelectric (TE) materials have attracted tremendous research interests over the past
few decades, due to their application in power generation technology from waste heat …

The operation of electronic devices relies on the density of free charge carriers available in
the semiconductor; in most semiconductor devices this density is controlled by the addition …

We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an
atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very …

We present a calculation of the full thermal conductivity tensor for (001),(111), and (011)
surface orientations of the silicon-on-insulator (SOI) nanomembrane, based on solving the …

To overcome the challenge of using two-dimensional materials for nanoelectronic devices,
we propose two-dimensional topological insulator field-effect transistors that switch based …

In this article, we investigate the electro-thermal (ET) performance of stacked Si gate-all-
around (GAA) nanosheet FET (NSHFET) by adopting the metal (M0) source/drain (S/D) …