The composition of nitrogen laser (wavelength 337 nm, pulse width 3 ns) induced ablation
plumes from ZnSe and ZnO targets was studied at different laser fluences using a time-of …

Two-sourced evaporation technique is used to prepare hard ZnSe films by controlling the
evaporation rates of both Zn and Se at substrate temperature of 400° C. The films are doped …

We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and
Si substrates through KrF excimer laser ablation of hot-pressed targets containing …

Two-source thermal evaporation method was utilized to prepare hard ZnSe thin films, the
films were then immersed in silver nitrate solution for different time periods. The optical …

We have deposited thin layers of ZnSe on (001) oriented GaAs substrates by pulsed laser
deposition at different incident laser fluence (referred to as normal geometry) and in an off …

We have examined strain–relaxation of Co-2× 2 islands grown on the Ag/Ge (111)-√ 3×√ 3
surface by analyzing scanning tunneling microscopy images. We have found that the Co-2× …

A modified method to measure the valence bands offset by photoelectron spectroscopy
(PES) between low doped and depleted semiconductors have been used. The surface …

We report surface photovoltage (SPV) spectra of ZnSe thin films deposited on n+ GaAs
substrates in the wavelength range of 400-800 nm. In the above bandgap region of ZnSe …

Transition metal doped II-VI semiconductor materials features excellent spectroscopic and
lasing characteristics in the middle infrared (mid-IR). Among this class of laser material, the …

Longitudinal optical (LO) phonon lineshape of pulsed laser deposited ZnSe epitaxial films
on (001) oriented GaAs with near E 0 gap excitation is investigated. Temperature …