[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
[HTML][HTML] Group III-nitride lasers: a materials perspective
An overview of III-Nitride based laser diodes (LDs) is presented focusing on the materials
challenges in each phase of device development. We discuss early breakthroughs leading …
challenges in each phase of device development. We discuss early breakthroughs leading …
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
GaN substrates for III-nitride devices
Despite the rapid commercialization of III-nitride semiconductor devices for applications in
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios
The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green-and red-emitting InGaN quantum wells
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …