With the development of high-power infrared lasers and optical devices based on GaSe,
more attention has been paid to its optical damage under laser irradiation. Understanding …

The present study focuses on the structural and optical characterizations of a GaSe thin-film
consisting of few layers mechanically exfoliated from bulk GaSe on a flexible PET substrate …

In this paper, structural and electrical properties of p-type undoped and Ce-doped (0.1 at%)
GaSe single crystals grown by using modified Bridgman method were investigated. The …

The study focuses on structural and optical characterizations and properties of the GaSe
lamellar material in one hand and on a numerical simulation of the photovoltaic properties of …

Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently
garnered considerable attention in various fields. In this study, we investigated the nonlinear …

In semiconductor physics, the Urbach rule describes an exponential dependence of the UV-
Vis absorption coefficient on photon energy at the band edge. The rule is so ubiquitously …

The linear absorption, nonlinear absorption (NA), second harmonic generation (SHG) and
carrier mobilities of undoped and 0.1 at% Dy doped GaSe single crystals grown by modified …

This Tutorial focuses on the physics of layered compounds under high pressure. We have
chosen h-BN and III–VI layered materials as representative materials. h-BN layers are strictly …

The aim of this study is to introduce a precise approach for the determination of the optical
parameters of mechanically exfoliated gallium selenide (ε–GaSe) thin films from both the …

Structural and electrical features of p-type neodymium-doped GaSe single crystal (0.1 at.%
Nd) grown by modified Bridgman technique was investigated through X-ray diffraction (XRD) …