2D materials in flexible electronics: recent advances and future prospectives
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …
provide new and innovative solutions to a wide range of challenges in various electronic …
Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications
Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due
to its excellent optoelectronic properties, which hold tremendous promise in a wide range of …
to its excellent optoelectronic properties, which hold tremendous promise in a wide range of …
Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising
advanced two-dimensional (2D) materials. Beyond inheriting the general advantages …
advanced two-dimensional (2D) materials. Beyond inheriting the general advantages …
Unveiling the distinctive mechanical and thermal properties of γ-GeSe
Abstract γ-GeSe is a newly identified polymorph among group-IV monochalcogenides,
characterized by a distinctive interatomic bonding configuration. Despite its promising …
characterized by a distinctive interatomic bonding configuration. Despite its promising …
Understanding the Growth Mechanisms of γ-GeSe for Polymorph-Selective Large-Area Deposition
Understanding the growth mechanisms of a newly discovered polymorphic material and
achieving large-scale selective growth is critical for accurate material characterization and …
achieving large-scale selective growth is critical for accurate material characterization and …
Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning
T Wang, F Liu, X Zhang, P Gong, S Zhu - ACS Photonics, 2023 - ACS Publications
Recent years have witnessed rapid advancements in materials technology, leading to the
anticipated development of ideal platforms for manufacturing postphotonic devices with wide …
anticipated development of ideal platforms for manufacturing postphotonic devices with wide …
Origin of positive/negative effects on pressure-dependent thermal conductivity: the role of bond strength and anharmonicity
Pressure-dependent thermal conductivity is leveraged to enhance device performance in
electronic materials. However, the unclear physical mechanisms greatly limit further …
electronic materials. However, the unclear physical mechanisms greatly limit further …
Thermally Induced Irreversible Disorder in Interlayer Stacking of γ‐GeSe
The interlayer stacking shift in van der Waals (vdW) crystals represents an important degree
of freedom to control various material properties, including magnetism, ferroelectricity, and …
of freedom to control various material properties, including magnetism, ferroelectricity, and …
First-principles prediction of the electronic properties and contact features of graphene/γ-GeSe van der Waals heterostructure: effects of electric fields and strains
TV Vu, AI Kartamyshev, AA Lavrentyev, NN Hieu… - RSC …, 2024 - pubs.rsc.org
In this work, we investigate systematically the electronic properties and tunable contact
behavior of the graphene/γ-GeSe heterostructure under applied electric fields and out-of …
behavior of the graphene/γ-GeSe heterostructure under applied electric fields and out-of …
Single Atomic Catalyst of Hydrogen Evolution Supported by Semimetallic γ-GeSe
Motivated by the recent synthesis of a new polymorph of germanium selenide (γ-GeSe) with
a honeycomb lattice and an astonishingly high conductivity (even higher than graphite) …
a honeycomb lattice and an astonishingly high conductivity (even higher than graphite) …