Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
GeSe thin-film solar cells
Thin-film solar cells made from non-toxic and earth-abundant materials are needed to
substitute the current best-developed absorbers such as cadmium telluride (CdTe) and …
substitute the current best-developed absorbers such as cadmium telluride (CdTe) and …
Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode
Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
Predicted septuple-atomic-layer Janus MSiGeN 4 (M= Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities
SD Guo, WQ Mu, YT Zhu, RY Han… - Journal of Materials …, 2021 - pubs.rsc.org
Janus two-dimensional (2D) materials have attracted much attention as they possess unique
properties caused by their out-of-plane asymmetry, and have been achieved in many 2D …
properties caused by their out-of-plane asymmetry, and have been achieved in many 2D …
Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi 2 P 4
SD Guo, WQ Mu, YT Zhu, XQ Chen - Physical Chemistry Chemical …, 2020 - pubs.rsc.org
The septuple-atomic-layer VSi2P4 with the same structure of experimentally synthesized
MoSi2N4 is predicted to be a spin-gapless semiconductor (SGS) with the generalized …
MoSi2N4 is predicted to be a spin-gapless semiconductor (SGS) with the generalized …
High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors
ZQ Fan, ZH Zhang, SY Yang - Nanoscale, 2020 - pubs.rsc.org
Using ab initio quantum-transport simulations, we studied the intrinsic transfer
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …
Enhanced photocatalytic activity for water splitting of blue-phase GeS and GeSe monolayers via biaxial straining
The structural, electronic, dipole-induced internal electric field, optical and photocatalytic
properties of monolayer GeS and GeSe under external biaxial strain were investigated by …
properties of monolayer GeS and GeSe under external biaxial strain were investigated by …
Monolayered silicon and germanium monopnictide semiconductors: excellent stability, high absorbance, and strain engineering of electronic properties
AQ Cheng, Z He, J Zhao, H Zeng… - ACS applied materials & …, 2018 - ACS Publications
The discovery of stable two-dimensional (2D) semiconductors with exotic electronic
properties is crucial to the future electronic technologies. Using the first-principles …
properties is crucial to the future electronic technologies. Using the first-principles …
Liquid-phase exfoliated GeSe nanoflakes for photoelectrochemical-type photodetectors and photoelectrochemical water splitting
Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic
radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials …
radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials …
Adsorption properties of glycol ethers on cubic germanane nanosheets: A first-principles study
The current study highlights the ability of cubic germanane nanosheets to adsorb the glycol
ethers, namely 2-methoxyethanol and 2-ethoxyethanol, which are used as major solvents in …
ethers, namely 2-methoxyethanol and 2-ethoxyethanol, which are used as major solvents in …