Stability, reliability, and robustness of GaN power devices: A review

JP Kozak, R Zhang, M Porter, Q Song… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Review of power electronics components at cryogenic temperatures

H Gui, R Chen, J Niu, Z Zhang… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
In order to apply power electronics systems to applications such as superconducting
systems under cryogenic temperatures, it is necessary to investigate the characteristics of …

SiC and GaN devices with cryogenic cooling

R Chen, FF Wang - IEEE Open Journal of Power Electronics, 2021 - ieeexplore.ieee.org
This article presents the cryogenically cooled application for wide bandgap (WBG)
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …

Performance of GaN power devices for cryogenic applications down to 4.2 K

L Nela, N Perera, C Erine… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices are employed in an increasing number of applications
thanks to their excellent performance. Nevertheless, their potential for cryogenic …

Design, operation, and loss characterization of a 1-kW GaN-based three-level converter at cryogenic temperatures

CB Barth, T Foulkes, O Azofeifa… - … on Power Electronics, 2020 - ieeexplore.ieee.org
This article investigates the potential for high power density, high-efficiency power
conversion using GaN-based flying capacitor multilevel power converters at low …

Development of high-power high switching frequency cryogenically cooled inverter for aircraft applications

H Gui, Z Zhang, R Chen, R Ren, J Niu… - … on Power Electronics, 2019 - ieeexplore.ieee.org
To better support the superconducting propulsion system in the future aircraft applications,
the technologies of high-power high switching frequency power electronics systems at …

Power distribution and propulsion system for an all-electric short-range commuter aircraft—a case study

J Ebersberger, L Fauth, R Keuter, Y Cao… - IEEE …, 2022 - ieeexplore.ieee.org
To participate in the transition towards a sustainable use of energy, the aircraft sector needs
to be transformed with respect to the energy carrier and propulsion methods. For smaller …

Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources

SK Mazumder, LF Voss, KM Dowling… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …

Characterization and failure analysis of 650-V enhancement-mode GaN HEMT for cryogenically cooled power electronics

R Ren, H Gui, Z Zhang, R Chen, J Niu… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a
cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN …

Characterization of wide bandgap semiconductor devices for cryogenically-cooled power electronics in aircraft applications

Z Zhang, H Gui, R Ren, F Wang… - 2018 AIAA/IEEE …, 2018 - ieeexplore.ieee.org
Wide bandgap (WBG) semiconductor devices and cryogenic cooling are key enablers for
highly-efficient ultra-dense power electronics converters, which are critical for future more …