GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

Gate controllability is a key factor that determines the performance of GaN high electron
mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct …

Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and
Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was …

This paper describes an extensive analysis of the role of off-state and semi-on state bias in
inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is …

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN
have been investigated. By application of regrown ohmic contacts, the problem with …

GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …

Herein, the results are reviewed concerning reliability of high‐electron mobility transistors
(HEMTs) based on GaN, which currently represent the technology of choice for high …

For this study, a microcrystalline Ba (Zr 0.05 Ti 0.95) O 3 (BZT) powder was prepared by a
high energy ball milling method followed by calcination at 1100° C for 4 h. The calcined …