Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
A review on a negative capacitance field-effect transistor for low-power applications
Malvika, B Choudhuri, K Mummaneni - Journal of Electronic Materials, 2022 - Springer
Low-power devices have emerged as a topic of intense research investigations as the need
for a better and more comfortable life requirement has escalated to small and efficient …
for a better and more comfortable life requirement has escalated to small and efficient …
Proposal for capacitance matching in negative capacitance field-effect transistors
Negative-capacitance transistors use ferroelectric (FE) material in the gate-stack to improve
the transistor performance. The extent of the improvement depends on the capacitance …
the transistor performance. The extent of the improvement depends on the capacitance …
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick
ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2) layer are fabricated based on …
ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2) layer are fabricated based on …
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors
Power consumption is one of the most challenging bottlenecks for complementary metal‐
oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) …
oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) …
Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
Abstract A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET)
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
Exploration of negative capacitance in gate-all-around Si nanosheet transistors
Gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs) are the most promising
candidates to replace FinFETs and nanowire (NW) FETs in future technology nodes owing …
candidates to replace FinFETs and nanowire (NW) FETs in future technology nodes owing …
Recent advances in negative capacitance FinFETs for low-power applications: a review
V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …