Metal oxide semiconductor-based Schottky diodes: a review of recent advances
NA Al-Ahmadi - Materials Research Express, 2020 - iopscience.iop.org
Abstract Metal-oxide-semiconductor (MOS) structures are essential for a wide range of
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
Radiation Response of HfOx-Based Resistive Random Access Memory (RRAM) Devices
A report on the fabrication and radiation response of HfO x thin film-based resistive random
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
Radiation sustenance of HfO2/β-Ga2O3 metal-oxide-semiconductor capacitors: gamma irradiation study
N Manikanthababu, BR Tak, K Prajna… - Semiconductor …, 2020 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an interesting new generation wide bandgap semiconductor for
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure
We have investigated the effects of 60 Co gamma-ray irradiation on the electrical properties
of an Al/C 24 H 12/p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series …
of an Al/C 24 H 12/p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series …
Grain fragmentation and phase transformations in hafnium oxide induced by swift heavy ion irradiation
We report on the 100 MeV Ag ion irradiation-induced modifications in hafnium oxide films
deposited by radio frequency (RF) magnetron sputtering method. The phase transformations …
deposited by radio frequency (RF) magnetron sputtering method. The phase transformations …
Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering
We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of
HfO 2 nanoparticles (NPs) within the HfO 2 thin-films deposited by radio frequency (RF) …
HfO 2 nanoparticles (NPs) within the HfO 2 thin-films deposited by radio frequency (RF) …
Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by CV and DLTS
Y Li, Y Ma, W Lin, P Dong, Z Yang, M Gong, J Bi… - Superlattices and …, 2018 - Elsevier
Abstract Gamma-ray (γ-ray) irradiation effects on HfO 2-based MOS capacitors have been
studied. The capacitance-voltage (CV) characteristic was measured at room temperature …
studied. The capacitance-voltage (CV) characteristic was measured at room temperature …
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
The effects of gamma irradiation on the electrical and trapping properties of AlGaN/GaN high-
electron-mobility transistors (HEMTs) are investigated in detail. During the irradiation, the …
electron-mobility transistors (HEMTs) are investigated in detail. During the irradiation, the …