Within the broad and deep field of topological materials, there are an ever-increasing
number of materials that harbor topological phases. While condensed matter physics …

As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …

The electron mean free path λ and carrier relaxation time τ of the twenty most conductive
elemental metals are determined by numerical integration over the Fermi surface obtained …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

A diverse spectrum of technology drivers such as improved thermal barriers, higher
efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic …

There is an ongoing drive to replace the most common transparent conductor, indium tin
oxide (ITO), with a material that gives comparable performance, but can be coated from …

Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …

Highly conductive copper nanowires (CuNWs) are essential for efficient data transfer and
heat conduction in wide ranging applications like high-performance semiconductor chips …

We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt).
Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses …

The electron scattering at surfaces, interfaces, and grain boundaries is investigated using
polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is …