Topological electronics
MJ Gilbert - Communications Physics, 2021 - nature.com
Within the broad and deep field of topological materials, there are an ever-increasing
number of materials that harbor topological phases. While condensed matter physics …
number of materials that harbor topological phases. While condensed matter physics …
[HTML][HTML] Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling
As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
[HTML][HTML] Electron mean free path in elemental metals
D Gall - Journal of applied physics, 2016 - pubs.aip.org
The electron mean free path λ and carrier relaxation time τ of the twenty most conductive
elemental metals are determined by numerical integration over the Fermi surface obtained …
elemental metals are determined by numerical integration over the Fermi surface obtained …
[HTML][HTML] The search for the most conductive metal for narrow interconnect lines
D Gall - Journal of Applied Physics, 2020 - pubs.aip.org
A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
[HTML][HTML] Nanoscale thermal transport. II. 2003–2012
A diverse spectrum of technology drivers such as improved thermal barriers, higher
efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic …
efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic …
Metal nanowire networks: the next generation of transparent conductors
S Ye, AR Rathmell, Z Chen, IE Stewart… - Advanced …, 2014 - Wiley Online Library
There is an ongoing drive to replace the most common transparent conductor, indium tin
oxide (ITO), with a material that gives comparable performance, but can be coated from …
oxide (ITO), with a material that gives comparable performance, but can be coated from …
Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure
Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires
Highly conductive copper nanowires (CuNWs) are essential for efficient data transfer and
heat conduction in wide ranging applications like high-performance semiconductor chips …
heat conduction in wide ranging applications like high-performance semiconductor chips …
Thickness dependence of the resistivity of platinum-group metal thin films
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt).
Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses …
Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses …
Electron scattering at surfaces and grain boundaries in Cu thin films and wires
The electron scattering at surfaces, interfaces, and grain boundaries is investigated using
polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is …
polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is …