Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe
nanocrystals by a process that allows the size, composition and position of the nanocrystals …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

In this article we review the extensive experimental work on the compositional mapping of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …

We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-
patterned and flat Si (001) substrates. Anomalous x-ray diffraction yields that nucleation in …

We demonstrate the possibility of growing SiGe islands on patterned Si (001) substrates with
pits having a continuous variation of the sidewall inclination angle α from α∼ 4° to α∼ 54° …

We determined the enthalpic and entropic contributions to the thermodynamics of coherently
strained nanocrystals grown via deposition of pure Ge on Si (001) surfaces at 600 and 700° …

SiGe islands grown by deposition of 10 monolayers of Ge on Si (001) at 740° C were
investigated by using a combination of selective wet chemical etching and atomic force …

Starting with the basic definition, a short description of a few relevant physical quantities
playing a role in the growth process of heteroepitaxial strained systems, is provided. As …