This paper presents an innovative and automated measurement setup for the
characterization of variability effects in CMOS transistors using array-based integrated …

This paper presents a toolbox for the automation of the electrical characterization of CMOS
transistors. The developed software provides a user-friendly interface to carry out different …

In current CMOS advanced technology nodes, accurate extraction of transistor parameters
affected by time-dependent variability, like threshold voltage (Vth) and mobility (μ), has …

In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability
effects have become important concerns for analog and digital circuit design. For instance …

The reliability and durability of integrated circuits (ICs), present in almost every electronic
system, from consumer electronics to the automotive or aerospace industries, have been …

Recent MOSFET devices exhibit a strong variability in their Bias Temperature Instability (BTI)
induced degradation (eg, Vth-shift). For identical stress patterns, each device exhibits …

In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability
(TDV) effects, the latter coming from aging mechanisms like Bias Temperature Instability …

Modeling and characterization of time-dependent variability phenomena as well as the
simulation of their impact on circuit operation have attracted considerable efforts. This paper …

Bias Temperature Instability has become a critical issue for circuit reliability. This
phenomenon has been found to have a stochastic and discrete nature in nanometer-scale …

RTN is one of the most relevant time-dependent variability sources and, as such, must be
taken into account during the design of memories, digital and analog VLSI-integrated circuits …