Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
RA Ovanesyan, DM Hausmann… - ACS Applied Materials & …, 2015 - ACS Publications
A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of
SiN x thin films using Si2Cl6 and NH3 plasma. At substrate temperatures≤ 400° C, we show …
SiN x thin films using Si2Cl6 and NH3 plasma. At substrate temperatures≤ 400° C, we show …
Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study
RP Vedula, NL Anderson, A Strachan - Physical Review B, 2012 - APS
We present a first-principles study of the effect of atomic variability on the structural,
mechanical, and electronic properties of amorphous silicon nitride. Using a combination of …
mechanical, and electronic properties of amorphous silicon nitride. Using a combination of …
高速沉积氮化硅薄膜对其化学键及性能的影响
谢振宇， 龙春平， 邓朝勇， 胡文成 - 液晶与显示, 2007 - cqvip.com
采用等离子增强型化学气相沉积法(RF-PECVD), 源气体为NH3/SiH4/N2 的混合气体, 在330℃
的温度下沉积a-SiNx: H 薄膜. 研究表明在反应气体流量一定的情况下, 反应腔气压对薄膜沉积 …
的温度下沉积a-SiNx: H 薄膜. 研究表明在反应气体流量一定的情况下, 反应腔气压对薄膜沉积 …
Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices
L Wang, G Liu, H Wang, D Song, B Yu… - Applied Physics Letters, 2007 - pubs.aip.org
We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-
semiconductor (MIS) devices by the measurement of capacitance and conductance, which …
semiconductor (MIS) devices by the measurement of capacitance and conductance, which …
Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors
W Lim, JH Jang, SH Kim, DP Norton… - Journal of Vacuum …, 2009 - pubs.aip.org
The performance of amorphous In Ga Zn O 4 thin film transistors with three different gate
dielectrics ( Si O 2, SiON, and Si N x) is reported. The gate dielectric films were …
dielectrics ( Si O 2, SiON, and Si N x) is reported. The gate dielectric films were …
Optimization of n+ nc-Si: H and a-SiNx: H layers for their application in nc-Si: H TFT
TA Anutgan, M Anutgan, I Atilgan, B Katircioglu - Vacuum, 2011 - Elsevier
The n-type doped silicon thin films were deposited by plasma enhanced chemical vapor
deposition (PECVD) technique at high and low H2 dilutions. High H2 dilution resulted in n+ …
deposition (PECVD) technique at high and low H2 dilutions. High H2 dilution resulted in n+ …
Effect of electrical and mechanical stresses of low temperature a-Si: H thin film transistors fabricated on polyimide and glass substrates
JJ Huang, CN Chen - Thin Solid Films, 2013 - Elsevier
Hydrogenated amorphous silicon thin film transistors (TFTs) were fabricated by plasma
enhanced chemical vapor deposition on both transparent polyimide and glass substrate …
enhanced chemical vapor deposition on both transparent polyimide and glass substrate …
[PDF][PDF] 玻璃基底和表面粗糙度在氮化硅薄膜椭偏测量中的影响
刘文德， 陈赤， 张航， 郭炜， 于靖， 樊其明， 徐英莹 - 中国激光, 2012 - researching.cn
摘要在光谱椭偏测量中, 玻璃基底的背反射会给测量结果造成较大影响. 针对平板显示器件玻璃
基底表面氮化硅镀膜进行了椭偏测量和模型计算. 采用相干背反射模型“空气基底空气” …
基底表面氮化硅镀膜进行了椭偏测量和模型计算. 采用相干背反射模型“空气基底空气” …
[PDF][PDF] Etude des non-linéarités de permittivité de diélectriques utilisés en microélectronique. Application aux capacités MIM.
S Bécu - 2006 - theses.hal.science
Le besoin grandissant de fabriquer des circuits aux fonctions de plus en plus nombreuses
nécessite de développer des dispositifs électroniques nouveaux. Les condensateurs …
nécessite de développer des dispositifs électroniques nouveaux. Les condensateurs …
[PDF][PDF] GaAs 衬底上氮化硅钝化层的低温制备工艺研究
吴涛， 江先锋 - Laser & Optoelectronics Progress, 2015 - researching.cn
摘要为了获得应用于AlGaAs 激光器上的优异的氮化硅薄膜, 采用等离子增强化学气相沉积(
PECVD) 低温条件下在GaAs 衬底上制备了不同参数的氮化硅薄膜, 利用光学膜厚仪 …
PECVD) 低温条件下在GaAs 衬底上制备了不同参数的氮化硅薄膜, 利用光学膜厚仪 …