Electric-field-control of magnetism can dramatically improve the energy efficiency of
spintronic devices and enhance the performance of magnetic memories. More generally, it …

A topical and highly promising aspect of the field of spintronics is the physics involved in the
flow of a spin-polarized current through magnetic tunnel structures. This review focuses on …

In one embodiment, an apparatus comprises a nano-scale spectrum sensor configured to be
electromagnetically excit able at a predetermined frequency based on received ambient …

Exchange interaction at the interface between magnetic layers exhibits significant
contribution to the magnetic resonance frequency. The in situ tuning of the resonance …

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic
memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ …

Tunnel magnetoresistive (TMR) devices have superior performances in weak magnetic field
detection. In this study, TMR devices were first employed to form a circular magnetic flux …

We propose a method for switching the Néel vector of an antiferromagnetic thin film by the
application of an ultrashort electric field pulse. The electric field induces a reorientation of …

Molecule-based devices may govern the advancement of the next generation's logic and
memory devices. Molecules have the potential to be unmatched device elements as …

In the absence of any external applied magnetic field, we have found that a magnetic tunnel
junction (MTJ) can produce a significant output direct voltage under microwave radiation at …

Исследования последних лет показали, что наличие спиновых степеней свободы у
носителей заряда проявляется наиболее ярко, и порой неожиданным образом, прежде …