Recent progress in solar‐blind deep‐ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors

C Xie, XT Lu, XW Tong, ZX Zhang… - Advanced Functional …, 2019 - Wiley Online Library
Due to its significant applications in many relevant fields, light detection in the solar‐blind
deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and …

AlGaN photonics: recent advances in materials and ultraviolet devices

D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

An Ultrahigh Responsivity (9.7 mA W−1) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga2O3 Heterostructures

B Zhao, F Wang, H Chen, L Zheng, L Su… - Advanced Functional …, 2017 - Wiley Online Library
Highly crystallized ZnO–Ga2O3 core–shell heterostructure microwire is synthesized by a
simple one‐step chemical vapor deposition method, and constructed into a self‐powered …

Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN

U Varshney, N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2022 - pubs.rsc.org
The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

X Chen, K Liu, Z Zhang, C Wang, B Li… - … applied materials & …, 2016 - ACS Publications
Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal
material for solar-blind photodetection without any bandgap tuning. Practical applications of …

Room‐Temperature Fabricated Amorphous Ga2O3 High‐Response‐Speed Solar‐Blind Photodetector on Rigid and Flexible Substrates

S Cui, Z Mei, Y Zhang, H Liang… - Advanced Optical …, 2017 - Wiley Online Library
A solution to the fabrication of amorphous Ga2O3 solar‐blind photodetectors on rigid and
flexible substrates at room temperature is reported. A robust improvement in the response …

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

A Singh Pratiyush, S Krishnamoorthy… - Applied Physics …, 2017 - pubs.aip.org
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial b-
Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The …

Wide-bandgap semiconductor ultraviolet photodetectors

E Monroy, F Omnès, F Calle - Semiconductor science and …, 2003 - iopscience.iop.org
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD

Y Ma, T Chen, X Zhang, W Tang, B Feng… - … Applied Materials & …, 2022 - ACS Publications
In this paper, self-powered ultraviolet (UV) photodetectors with high response performance
based on Ga2O3/p-GaN were fabricated by metal–organic chemical vapor deposition …

Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection

Y Li, T Tokizono, M Liao, M Zhong… - Advanced Functional …, 2010 - Wiley Online Library
An increasing number of applications using ultraviolet radiation have renewed interest in
ultraviolet photodetector research. Particularly, solar‐blind photodetectors sensitive to only …