The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with
atomic level control of the thickness and an excellent conformality on 3-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

Atomic layer deposition (ALD) has within the past few years received world-wide attention
for manufacturing conformal material layers with thickness in the nanometer range …

Despite the considerably improved efficiency of inorganic–organic metal hybrid perovskite
solar cells (PSCs), electron transport is still a challenging issue. In this paper, we report the …

The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of
trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300° C. Ex situ X-ray reflectivity …